بطاقة خط

Winbond Electronics Corporation

Winbond Electronics Corporation

- Winbond Electronics Corporation is a memory IC company engaged in design, manufacturing and sales service to provide its global customers top quality memory solutions. Winbond’s product lines include Code Storage Flash Memory, Serial and Parallel NAND, Specialty DRAM and Mobile DRAM.
Winbond products are widely used by companies in the IoT vertical markets such as computing, connected multimedia devices, automobile, networking systems and industrial. Winbond offers automotive and Industrial –Plus grade Flash and DRAM products with longevity support. Winbond has approximately 2,200 employees worldwide, that includes a 12-inch FAB at its headquarters in Taichung, Taiwan.
صورة رقم القطعة وصف رأي
W971GG8KB-25 TR IC SDRAM 1GBIT 400MHZ 60BGA تحقيق
W25Q256FVBIF Image W25Q256FVBIF IC FLASH 256MBIT 104MHZ 24TFBGA تحقيق
W25Q128JVAIQ TR IC FLASH 128MBIT 104MHZ 8DIP تحقيق
W25P80VSSIG T&R IC FLASH 8MBIT 50MHZ 8SOIC تحقيق
W9816G6IH-6 Image W9816G6IH-6 IC SDRAM 16MBIT 166MHZ 50TSOP تحقيق
W9812G6IH-6 Image W9812G6IH-6 IC SDRAM 128MBIT 166MHZ 54TSOP تحقيق
W9825G6KH-6I TR Image W9825G6KH-6I TR IC SDRAM 256MBIT 166MHZ 54TSOP تحقيق
W25X40CLSNIG IC FLASH 4MBIT 104MHZ 8SOIC تحقيق
W29N01HVBINA Image W29N01HVBINA IC FLASH 1GBIT 25NS 63VFBGA تحقيق
W25Q80DVSNIG IC FLASH 8MBIT 104MHZ 8SOIC تحقيق
W25X05CLSNIG IC FLASH 512KBIT 104MHZ 8SOIC تحقيق
W9425G6EH-5 Image W9425G6EH-5 IC SDRAM 256MBIT 250MHZ 66TSOP تحقيق
W949D6DBHX5E Image W949D6DBHX5E IC SDRAM 512MBIT 200MHZ 60BGA تحقيق
W25Q80BWSNIG IC FLASH 8MBIT 80MHZ 8SOIC تحقيق
W25Q80BVDAIG TR IC FLASH 8MBIT 104MHZ 8DIP تحقيق
W9751G6KB-18 Image W9751G6KB-18 IC SDRAM 512MBIT 533MHZ 84BGA تحقيق
W9425G6KH-5 TR Image W9425G6KH-5 TR IC SDRAM 256MBIT 200MHZ 66TSOP تحقيق
W9825G6JH-6 TR Image W9825G6JH-6 TR IC SDRAM 256MBIT 166MHZ 54TSOP تحقيق
W25Q16DWUUIG TR Image W25Q16DWUUIG TR IC FLASH 16MBIT 104MHZ 8USON تحقيق
W25Q64FVZPIQ IC FLASH 64MBIT 104MHZ 8WSON تحقيق
W9864G2JH-6 IC SDRAM 64MBIT 166MHZ 86TSOP تحقيق
W25Q64FVSSIQ IC FLASH 64MBIT 104MHZ 8SOIC تحقيق
W987D2HBJX7E TR Image W987D2HBJX7E TR IC SDRAM 128MBIT 133MHZ 90BGA تحقيق
W947D6HBHX6E Image W947D6HBHX6E IC SDRAM 128MBIT 166MHZ 60TFBGA تحقيق
W94AD2KBJX5E TR Image W94AD2KBJX5E TR IC SDRAM 1GBIT 200MHZ 90TFBGA تحقيق
W25X20CLSNIG TR IC FLASH 2MBIT 104MHZ 8SOIC تحقيق
W631GU6KB12I Image W631GU6KB12I IC SDRAM 1GBIT 800MHZ 96BGA تحقيق
W25Q256FVCIF Image W25Q256FVCIF IC FLASH 256MBIT 104MHZ 24TFBGA تحقيق
W25Q16FWBYIG TR IC FLASH 16MBIT 104MHZ 8WLCSP تحقيق
W25X40CLSSIG IC FLASH 4MBIT 104MHZ 8SOIC تحقيق
W97AH2KBVX2E Image W97AH2KBVX2E IC SDRAM 1GBIT 400MHZ 134VFBGA تحقيق
W978H2KBVX2I Image W978H2KBVX2I IC SDRAM 256MBIT 400MHZ 134VFBGA تحقيق
W25Q256JVEIM TR IC FLASH 256MBIT 8WSON تحقيق
W632GU8KB-12 TR Image W632GU8KB-12 TR IC SDRAM 2GBIT 800MHZ 78BGA تحقيق
W972GG8JB-25 TR IC SDRAM 2GBIT 400MHZ 60WBGA تحقيق
W29GL512PH9B TR Image W29GL512PH9B TR IC FLASH 512MBIT 90NS 64LFBGA تحقيق
W25Q64FWSSIG IC FLASH 64MBIT 104MHZ 8SOIC تحقيق
W25X80VSFIG IC FLASH 8MBIT 75MHZ 16SOIC تحقيق
W25X10BVZPIG IC FLASH 1MBIT 104MHZ 8WSON تحقيق
W9725G8KB25I TR IC SDRAM 256MBIT 400MHZ 84BGA تحقيق
W29GL512PH9T TR Image W29GL512PH9T TR IC FLASH 512MBIT 90NS 56TSOP تحقيق
W25Q64FWBYIG TR IC FLASH 64MBIT 104MHZ 16WLCSP تحقيق
W25Q16JVSNIQ TR IC FLASH 16MBIT 133MHZ 8SOIC تحقيق
W25Q128FVFIQ IC FLASH 128MBIT 104MHZ 16SOIC تحقيق
W25Q40BWZPIG IC FLASH 4MBIT 80MHZ 8WSON تحقيق
W9464G6KH-5I Image W9464G6KH-5I IC SDRAM 64MBIT 200MHZ 66TSOP تحقيق
W971GG6KB-25 TR Image W971GG6KB-25 TR IC SDRAM 1GBIT 400MHZ 84BGA تحقيق
W9464G6KH-5I TR Image W9464G6KH-5I TR IC SDRAM 64MBIT 200MHZ 66TSOP تحقيق
W98AD2KBJX6I IC MEMORY SDRAM 1GB 90VFBGA تحقيق
W25X10CLSNIG IC FLASH 1MBIT 104MHZ 8SOIC تحقيق
سجلات 949