Texas Instruments (TI) (NASDAQ: TXN) today announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ power stages to support applications up to 10 kW. The LMG341x family enables designers to create smaller, more efficient and higher-performing designs compared to silicon field-effect transistors (FETs) in AC/DC power supplies, robotics, renewable energy, grid infrastructure, telecom and personal electronics applications. For more information, see http://www.ti.com/lmg3410r050-pr, http://www.ti.com/lmg3410r070-pr and http://www.ti.com/lmg3411r070-pr.

Backed by 20 million hours of device reliability testing, high-voltage GaN FET with integrated driver and protection doubles power density in industrial and telecom applications

TI's family of GaN FET devices provides a smart alternative to traditional cascade and stand-alone GaN FETs by integrating unique functional and protection features to simplify design, enable greater system reliability and optimize the performance of high-voltage power supplies. With integrated <100-ns current limiting and overtemperature detection, the devices protect against unintended shoot-through events and prevent thermal runaway, while system interface signals enable a self-monitoring capability.